| 摘要 |
PROBLEM TO BE SOLVED: To prevent leak current or poor breakdown-strength caused by bad crystallinity which takes place in a defective crystal region by comprising an insulating film for filling a recessed defect contained in a semiconductor wafer as well as a semiconductor device formed on the surface of semiconductor wafer. SOLUTION: By a CVD method, a silicon oxide film 23, for example, is grown to the thickness equal to, or larger than, the radius of a micro pipe 22. Here, the micro pipe 22 (hole part) is filled with the silicon oxide film 23 (b). Then the silicon oxide film 23 is etched and removed from the surface side of a substrate 21, with the etching stopped when reaching the substrate 21. Thus, only the micro pipe 22 is filled with the silicon oxide film 24 (c). Ion-implanting is performed with p-type impurity before thermal-treatment annealing to form a p-type layer 25 (d). Lastly an electrode 26 is formed to provide a semiconductor element where a large joint diode is formed (d).
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