发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To prevent increasing remarkably chip size by performing batch write-in using a multi-cell write-driver. SOLUTION: A multi-cell write-driver is composed of a third write-driver 23 which is disposed between a high voltage power source side and the ground, consists of one pair of transistors having size of several times as large as the existing transistor, and the intermediate of the pair of transistors is connected to an input/output line 12, and a fourth write-driver 24 which is disposed between a high voltage power source side and the ground, consists of one pair of transistors having size of several times as large as the existing transistor, and the intermediate of the pair of transistors is connected to an inversion input/output line 13. When an initialization permitting signal (batch write-in signal) and a write-enable signal are in an enable-state, write-in of write-in data is performed using a multi-cell write-driver. When batch write-in is performed based on an initialization permitting signal, write-in can be performed stably during one access cycle.</p>
申请公布号 JP2001076488(A) 申请公布日期 2001.03.23
申请号 JP19990252027 申请日期 1999.09.06
申请人 MITSUBISHI ELECTRIC CORP;KANEBO LTD 发明人 NAGANO HIDEO;NAGASAWA YOSHIAKI
分类号 G11C11/41;G11C16/02;(IPC1-7):G11C11/41 主分类号 G11C11/41
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