| 摘要 |
PROBLEM TO BE SOLVED: To enable a DTMISFET(Dynamic Threshold Voltage Metal Insulator Semiconductor Field Effect Transistor) to be lessened in area exclusively occupied by it. SOLUTION: An Si single crystal substrate 12, a silicon oxide film 13, and an Si-body 14 are successively laminated for the formation of an SOI substrate 11. An Si-Body 14 is protrudent in cross section. A side wall insulating film 17 is formed on the upper side wall of the protrudent Si-Body 14. A gate insulating film 18 is formed on a part of the Si-Body 14. Source/drain regions 16 are formed on the surface layer of the Si-Body 14 so as to sandwich the gate insulating film 18 between them. A metal gate electrode 19 is formed on the gate insulating film 18 coming into contact with the side wall insulating film 17 and the lower side face of the protrudent Si-Body 14. That is, the metal gate electrode 19 and the Si-Body 14 as an element region are electrically connected together at the side of the Si-Body 14.
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