| 摘要 |
PROBLEM TO BE SOLVED: To improve an etching method in vertical etching selectivity, horizontal selectivity, and anisotropy so as to enable an insulator to be etched by a method wherein the passivation of a passivation material is canceled out, and only the surface of an insulating material layer which receives light rays is etched. SOLUTION: An insulating material layer 10 on a support surface 12 is dipped into a liquid which contains a passivation material that prevents a passivated etching liquid 15 or an etching liquid 15 from acting on the material layer 10. The etching liquid 15 passivates the surface of the layer 10 and contains a passivation material which serves as a material that prevents the layer 10 from being etched by an etchant or an etching material prior to the irradiation of the layer 10 with light rays. The surface 25 of the layer 10 to etch is irradiated with reference light, by which the passivation of the surface 25 is canceled out, and only a region of the layer 10 irradiated with reference light is started to be etched and kept being etched as far as it is irradiated with light rays.
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