| 摘要 |
PROBLEM TO BE SOLVED: To form a giant magnetoresistance effect magnetoresistance sensor film having satisfactory characteristics or a spin tunnel magnetoresistive sensor film by a method, where when a film formation is performed using at least one material in one film-forming process on a substrate, a laminated film film- forming device has a means changeable a potential in the substrate during the film formation. SOLUTION: A film-forming chamber 13 adjusts the output of a DC power supply 134 by a cathode controller 138 through a film-forming chamber control system 139 and controls the quantity of a material, an atomic cluster, which released from a target 132 through sputtering. In a film-forming chamber 14, a coil 140 is installed in the vicinity of a target 142 and power from an AC power supply 146 is fed to the coil 140 via a matching device 145, but by changing the output of the power supply 146 during film formation by an AC power programmable controller 147, potential in a plasma is changed during the time, when the film-formation is performed, whereby a potential in a substrate can be controlled.
|
