METHOD AND DEVICE FOR FORMING SEMICONDUCTOR THIN FILM

摘要

PROBLEM TO BE SOLVED: To form an amorphous semiconductor thin film containing a plurality of elements with high reproducibility while the state of plasma discharge is maintained in a fixed steady state and a desired compositional distribution is formed in the thickness direction of the semiconductor thin film. SOLUTION: In a method for forming semiconductor thin film, a semiconductor thin film is formed on a substrate 1101 by resolving a gaseous material by plasma discharge by impressing high-frequency power. In this case, one or more gaseous starting material introducing means 1129 and one power introducing means 1124 are provided in one film forming chamber 1103 and the power introducing means 1124 is set so that the highest-value position of power density distribution on the substrate 1101 may not come to the central part of the substrate 1101 exposed to the discharging space.