发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To shorten cycle time and to increase operation speed at reading out in a logic-mix DRAM. SOLUTION: This DRAM-macro is provided with a memory array having plural memory cells, a pair of read-data lines RDL provided extending on a memory array in a direction of column, a read-column decoder 110 (110f, 110n) generating a column selecting signal for coupling selectively the pair of read- data lines RDL and plural sense amplifiers, and a pre-amplifier 42 amplifying potential difference generated in the pair of read-data lines RDL. The pre-amplifier 42 (42f, 42n) and the read-column decoder 110 are arranged at regions being opposite side each other keeping the memory array between them.
申请公布号 JP2001076482(A) 申请公布日期 2001.03.23
申请号 JP19990253364 申请日期 1999.09.07
申请人 MITSUBISHI ELECTRIC CORP 发明人 YAMAZAKI AKIRA;WATANABE NAOYA
分类号 G11C11/401;G11C7/10;G11C7/18;G11C11/409;G11C11/4097;H01L21/8242;H01L27/10;H01L27/108 主分类号 G11C11/401
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