THIN FILM TRANSISTOR, LIQUID CRYSTAL DISPLAY DEVICE, AND MANUFACTURE OF THIN FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To improve productivity in the deposition of the a-Si film of a thin film transistor and also enhance the thin film transistor in characteristics. SOLUTION: An amorphous silicon film 2, a gate insulating film 3, a gate insulating film 3, and a gate electrode 4 are sequentially laminated on an insulating substrate 1 for the formation of a thin film transistor. In this case, the amorphous silicon film 2 is composed of a low-defect density amorphous silicon layer 5 that is formed at a low deposition rate and a high-speed amorphous silicon layer 6 formed at a higher deposition rate than the silicon layer 5, where the amorphous silicon layer 5 is located closer to the insulating board 1 than the amorphous silicon layer 6, and the amorphous silicon layer 6 is formed coming into contact with the under surface of the gate insulating film 3.