| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor laser having an HBB structure so that the working voltage does not rise so high while having the HBB structure, and most of a current can be injected into a desired area even when a HBB withstand voltage cannot be obtained fully. SOLUTION: A semiconductor laser has a light-emitting layer forming section 12, constituted in a double heterostructure in which an active layer 7, is sandwiched between n- and p-type clad layers 8 and 6 and 4. On the side of the p-type clad layer 4 opposite to the active layer 7, a p-type semiconductor layer 2 having a band gap which is different from that of the clad layer 4 is provided so that the layer 2 comes into contact with the clad layer 4, at portions other than stripe-like contact layers 3 via the contact layers 3. The contact layers 3 are formed, so that the layers 3 have band gaps which lie between those of the clad layer 4 and semiconductor layer 2 and the band gaps have a successively changing gradient.
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