| 摘要 |
PROBLEM TO BE SOLVED: To obtain a solid-state image sensing device which can restrain color mixing and has high sensitivity and also can improve color shading. SOLUTION: The device comprises an N-type silicon substrate 1, a photodiode PD formed inside the substrate 1, a charge transfer part structure 3 comprising transfer electrodes G1, G2 formed on the substrate 1 between the photodiodes PD and color filter layers 12, 13, 14 formed between the charge transfer part structures 3. As a result, a solid-state image sensing device which can restrain color mixing, has high sensitivity and also can improve color shading, and a manufacturing method thereof can be obtained.
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