| 摘要 |
PROBLEM TO BE SOLVED: To enhance electrical characteristics of a nitrogen compound semiconductor light-emitting element by a method, where when the light-emitting element consisting of a nitrogen compound semiconductor film is formed on a nitrogen compound semiconductor substrate, an element belonging to a group VII elements is contained in the nitrogen compound semiconductor substrate as impurities. SOLUTION: A sapphire substrate 230, grown with an undoped GaN base layer having a striped growth suppressing film, is introduced in an H-VPE apparatus. Then N2 carrier gas 205 and NH3 gas 204 are respectively introduced in the H-VPE unit through an introducing tube 211, while being controlled by a mass flow controller 206 and after the temperature of the substrate 230 is heated, GaCl gas is introduced on the substrate 230 through an inlet tube 208 to start the growth of the thick film of a GaN. At the same time, Cl2 gas 202 is fed on the substrate 230 through an inlet tube 209 as impurities belonging to a group VII element, to grow a GaN film doped together Cl and Si and a nitrogen compound semiconductor substrate is obtained. |
