发明名称 GATE COMMUTATION SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To restrain a gate lead-out terminal from resonating with the switching action of an element and to lessen screwing joints between a gate lead-out terminal and a multilayer board in number in a GCT thyristor device. SOLUTION: The inner circumferential plane 10I of a gate lead-out terminal 10 and the center 10F sandwiched between the insulating cylinders of a GCT device in a vertical direction are integrally formed annularly. Furthermore, six rectangular gate lead-out terminals 10O are each provided to the outer peripheral edge of the center 10F at six points in a radial manner. The six rectangular gate lead-out terminals 10O are extended from the insulating cylinder of the GCT device and screwed onto the driver gate electrodes of a multilayered board through the intermediary of openings 10b each provided to their tips.
申请公布号 JP2001077350(A) 申请公布日期 2001.03.23
申请号 JP19990251442 申请日期 1999.09.06
申请人 MITSUBISHI ELECTRIC CORP 发明人 KURACHI KAZUHIRO
分类号 H01L29/744;H01L21/52;H01L29/74;(IPC1-7):H01L29/744 主分类号 H01L29/744
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