| 摘要 |
The defect analysis method has a HF magnetic field applied to the examined surface of the semiconductor material, via a magnetic field coil (11), with detection of the eddy current response within the semiconductor material. The examined area of the semiconductor material is illuminated with light for charge carrier generation, the eddy current response detected via an inductive sensor (12) with a detector coil, which can be provided by the magnetic field coil.
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