Defocusing calculation method for lithographic process e.g. for semiconductor manufacture, uses evaluation of Gauss function for line width and roughness of patterns obtained by double exposure operations

摘要

The defocusing calculation method uses a number of double exposure operations for forming a number of pattern, with measurement of the line width and the edge roughness of the latter, used for providing a Gauss function. The defocusing of a pseudo profile of the lithographic beam is obtained from the distribution width of the Gauss curve. An Independent claim for a lithographic process is also included.