| 摘要 |
<p>A semiconductor wafer level package used to encapsulate a device fabricated on a semiconductor substrate wafer (11) before dicing of the wafer into individual chips. A cap wafer (16) may be bonded to the semiconductor subtrate using a low temperature frit glass layer (14) as a bonding agent. The frit glass layer (14) is in direct contact with the device. A hermetic seal is formed by a combination of the semiconductor substrate wafer (11), the cap wafer (16) and the first glass layer (14). A second embodiment of the package (21) does not contain a cap wafer.</p> |
