| 摘要 |
The invention relates to an LDMOS transistor including a gate, source and drain, and an earth plane located under the gate, source and drain. According to the invention, the earth plane is given such an extent in the lateral direction of the transistor that an additional component of chip type can be mounted on it, whereby the LDMOS transistor and the additional component of chip type have a shared earth plane. The earth plane suitably comprises a silicon layer which is doped so that it has become conductive and can thereby constitute the earth plane for the transistor and the additional component of chip type. |
