| 摘要 |
<p>The invention concerns a method for producing a copper connection with a copper connecting element (2) of an integrated circuit comprising a damascene structure, the connecting element (2) being coated successively with an encapsulating layer (3) and at least a dielectric material layer (4) with low dielectric constant. The method comprises the following steps: etching said dielectric material layer (4) until the encapsulating layer (3) is reached, to obtain a connection hole, opposite the connecting element; producing a protective layer (7) on the wall of the connecting hole, the protective layer preventing the dielectric layer from being contaminated by copper diffusion; etching the encapsulating layer (3), at the base of the connecting hole, in such a way as to expose the connecting element (2); filling the connecting hole with copper.</p> |
