Compensating component used in metal oxide semiconductor transistor (MOST) comprises an n-conducting drift zone provided in a silicon semiconductor body

摘要

Compensating component comprises an n-conducting drift zone (7) provided in a silicon semiconductor body. Areas (8) containing clusters of p-conducting dopant are formed in the drift zone and selected so that the distance between the acceptor level and the valence band edge is larger than the distance between the donator level and the conducting band edge. Independent claims are also included for: (A) the production of a compensating element comprising inserting a p-conducting dopant simultaneously with the n-conducting dopant into the drift zone before depositing an epitaxial layer; and (B) the production of a drift zone of a compensating element.