| 摘要 |
PURPOSE: A semiconductor device, a manufacturing method thereof, and a method for manufacturing an SOI(Silicon On Insulator) substrate are provided to be capable of reducing matching capacitance, improving α line resistance, and enhancing operation characteristics. CONSTITUTION: A semiconductor device is provided with a thin film structure(123) made of the first conductive layer(121) and the first insulating layer(122), the first spacer(124) partially formed at one side of the thin film structure, the second spacer(125) formed at the other side of the thin film structure, and the third spacer(126) formed at the lateral portion of the first spacer. The semiconductor device further includes a cavity portion near to the thin film structure, and the third conductive layer and the second insulating layer formed in the cavity portion.
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