METHOD FOR FORMING CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming contact of semiconductor device is provided to improve an electric characteristic of a device by diffusing a phosphorous injected by a following heat process and uniformly forming a bitline poly silicon layer. CONSTITUTION: A gate poly silicon layer(20) deposited to a semiconductor substrate(10) and a gate tungsten silicide layer(25) are etched and then a gate electrode(30) is formed. An insulating film(40) is etched and then a contact hole(45) is formed. A photosensitivity film(65) is deposited to a position of the contact hole(45). A phosphorous is injected through a contact portion(70) of the photosensitivity film(65) and a light doping region(73) is formed to a lower portion of the gate tungsten silicide layer(25). A tungsten oxide film(50) is deposited to a boundary on the gate tungsten silicide layer(25).