Light emitting diode used in computer peripherals and instrument displays comprises an epitaxial layer, a composite layer, a conducting substrate, a counter electrode and a front electrode

摘要

Light emitting diode comprises an epitaxial layer (34) with a light emitting pn-junction; a composite layer (40) connected to the lower side and/or the base surface of the epitaxial layer; a conducting substrate (42) formed on the lower side and/or the base surface of the composite layer; a counter electrode formed on the lower side of the substrate; and a front electrode (48) formed on the upper side of the epitaxial layer so that a closed circuit is formed with the counter electrode. Preferred Features: The epitaxial layer consists of a III-V compound semiconductor. The front electrode is a transparent electrode and is made of zinc oxide, indium oxide, tin oxide and ITO.