发明名称 Manufacturing method for cantilevered structure used for sensor application involves plasma etching of substrate in window region over portion of substrate thickness in front of support or functional layer
摘要 A support layer or functional layer (3-6) is deposited on the side of a substrate (1). A substrate material for a cantilevered structure in a window region (12) is etched in the side opposite to a layer side up to the support layer or functional layer. The plasma etching of the substrate in the window region is performed over a portion of the substrate in front of the support layer or functional layer. An Independent claim is also included for a sensor structure on a semiconductor wafer.
申请公布号 DE19941701(A1) 申请公布日期 2001.03.22
申请号 DE19991041701 申请日期 1999.09.02
申请人 ROBERT BOSCH GMBH 发明人 PANNEK, THORSTEN;FREY, WILHELM
分类号 B81B3/00;B81C1/00;(IPC1-7):H01L21/306 主分类号 B81B3/00
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