发明名称 |
Manufacturing method for cantilevered structure used for sensor application involves plasma etching of substrate in window region over portion of substrate thickness in front of support or functional layer |
摘要 |
A support layer or functional layer (3-6) is deposited on the side of a substrate (1). A substrate material for a cantilevered structure in a window region (12) is etched in the side opposite to a layer side up to the support layer or functional layer. The plasma etching of the substrate in the window region is performed over a portion of the substrate in front of the support layer or functional layer. An Independent claim is also included for a sensor structure on a semiconductor wafer.
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申请公布号 |
DE19941701(A1) |
申请公布日期 |
2001.03.22 |
申请号 |
DE19991041701 |
申请日期 |
1999.09.02 |
申请人 |
ROBERT BOSCH GMBH |
发明人 |
PANNEK, THORSTEN;FREY, WILHELM |
分类号 |
B81B3/00;B81C1/00;(IPC1-7):H01L21/306 |
主分类号 |
B81B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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