发明名称 PRODUCTION OF SPUTTERING TARGET CONTAINING ZINC OXIDE
摘要 PROBLEM TO BE SOLVED: To prevent the reaction between zinc oxide and a setter at the time of baking and to prevent the generation of compositional unevenness and warpage by placing a molded body of a raw material powder mixture contg. zinc oxide on a setter, directly supporting it by the part therein composed of a zirconia series material and executing baking at a specified temp. SOLUTION: An assistant such as polyvinyl alcohol is added to a raw material powder mixture contg. zinc oxide, and molding is executed. The molded body is dried and is degreased, is thereafter placed on a setter and is baked at 900 to 1700 deg.C which is the temp. equal to or below the melting point (1800 deg.C) of zinc oxide, preferably at 1200 to 1700 deg.C to obtain a zinc oxide-contg. sputtering target for thin film formation of a transparent electrode. At this time, at least the part directly supporting the molding is composed of a zirconia series material such as stabilized zirconia. In the case the zirconia series material is used as a coating material, the one contg. a zirconia solid solution with a rhombic system crystal structure which has been substituted by ions in which the ion radius Ra(&angst;) sastisfies 0.60<Ra<0.80 is preferable.
申请公布号 JP2001073122(A) 申请公布日期 2001.03.21
申请号 JP19990248076 申请日期 1999.09.01
申请人 MITSUI MINING & SMELTING CO LTD 发明人 HAYASHI HIROMITSU;ONO NAOKI
分类号 C04B35/64;C23C14/34;H01L21/28;H01L21/285 主分类号 C04B35/64
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