发明名称 PRODUCTION OF ANTI-OXIDANT SILICON CARBIDE-SILICON COMPOSITE MATERIAL
摘要 PROBLEM TO BE SOLVED: To provide a high efficiency production process for an antioxidant SiC-Si composite material in low costs that develops excellent durability in the active oxidation area of a low oxygen concentration. SOLUTION: A nitridation promoter is added to the surface of a SiC formed body and allowed to coat the surface of the SiC formed body, and the SiC formed body is heat-treated, as it is allowed to contact with metallic silicon at a temperature higher than the melting point of metallic silicon in an nitrogen atmosphere to sinter SiC and the pores are impregnated and filled with fused Si, then cooled down. During these steps, fused Si is held at 1,000-1,400 deg.C for a prescribed time, to solidify the impregnated and filled Si melt and simultaneously nitride the Si on the surface layer. In a preferred embodiment, a Ca compound or Fe compound is used as a nitridation promoter, and the thickness of the Si3N4 layer formed on the surface layer is adjusted to >=1μm.
申请公布号 JP2001072481(A) 申请公布日期 2001.03.21
申请号 JP19990246985 申请日期 1999.09.01
申请人 TOKAI KONETSU KOGYO CO LTD 发明人 ONO TOSHITERU
分类号 C04B41/87;C04B41/50;C04B41/85;(IPC1-7):C04B41/87 主分类号 C04B41/87
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