发明名称 SILICON CARBIDE MATERIAL WITH HIGH-HARDNESS SURFACE
摘要 PROBLEM TO BE SOLVED: To provide a novel SiC material that has substantially zero porosity in the vicinity of the surface and has the hardness higher than that of KK in the Moh's hardness. SOLUTION: The objective SiC material comprises the surface layer 1 constituted with bundles of fine fibers and the inner layer 2 constituted with the bundles of thick fibers, the surface layer 1 and the inner layer 2 are jointed to each other via a binder or an inorganic adhesive material to form a formed body. This formed molded body or another formed body in which Si is arranged so that a layer of only silicon carbide 3 may be formed at least at the outermost face of the surface layer part of the fired body, when the formed body is fired at a prescribed temperature.
申请公布号 JP2001072482(A) 申请公布日期 2001.03.21
申请号 JP19990249602 申请日期 1999.09.03
申请人 NGK INSULATORS LTD 发明人 HANZAWA SHIGERU;NAKANO KENJI
分类号 C04B41/87;C04B41/50;(IPC1-7):C04B41/87 主分类号 C04B41/87
代理机构 代理人
主权项
地址