发明名称 |
SILICON CARBIDE MATERIAL WITH HIGH-HARDNESS SURFACE |
摘要 |
PROBLEM TO BE SOLVED: To provide a novel SiC material that has substantially zero porosity in the vicinity of the surface and has the hardness higher than that of KK in the Moh's hardness. SOLUTION: The objective SiC material comprises the surface layer 1 constituted with bundles of fine fibers and the inner layer 2 constituted with the bundles of thick fibers, the surface layer 1 and the inner layer 2 are jointed to each other via a binder or an inorganic adhesive material to form a formed body. This formed molded body or another formed body in which Si is arranged so that a layer of only silicon carbide 3 may be formed at least at the outermost face of the surface layer part of the fired body, when the formed body is fired at a prescribed temperature.
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申请公布号 |
JP2001072482(A) |
申请公布日期 |
2001.03.21 |
申请号 |
JP19990249602 |
申请日期 |
1999.09.03 |
申请人 |
NGK INSULATORS LTD |
发明人 |
HANZAWA SHIGERU;NAKANO KENJI |
分类号 |
C04B41/87;C04B41/50;(IPC1-7):C04B41/87 |
主分类号 |
C04B41/87 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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