| 摘要 |
PROBLEM TO BE SOLVED: To simply, economically advantageously produce a single crystal in an industrial scale by using a doping material in a powder shape containing a nitride-bonded silicon, and pulling the single crystal from a molten liquid. SOLUTION: This method is used for producing a single crystal from a semiconductor material. The method is used for producing the single crystal from silicon by a Czochralski method or a molten zone method. The molten liquid is obtained by adding a doping material to the molten liquid, or mixing the doping material with a solid for forming the resultant molten liquid, and melting the obtained mixture. The doping material is dissolved in the molten liquid, and the single crystal is pulled from the molten liquid. The merit is possibility of the use by measuring, and the properties capable of simple doping the doping material. The doping material can be introduced without difficulty and the process can be incorporated into the prescribed production process. The doping material has a powdery form, and is Si2N3H or Si3N4 or a mixture thereof, containing a nitride-bonded silicon. The powdery micro structure can be crystal or amorphous.
|
