Method of decreasing the mutual inductance between bond wires in a high frequency amplifying circuit

摘要

A semiconductor device is disclosed which includes: a high-frequency-use semiconductor chip including amplifier circuits capable of operating at high frequencies; a package on which the semiconductor chip is mounted; and bonding wires each provided for electrically connecting one of the amplifier circuit to the package, wherein the electrical connect means are provided such that the distance between bonding pads serving as first contacts at which the bonding wires are electrically connected to the respective amplifier circuits that form an adjacent pair is smaller than the distance between second contacts at which the bonding wires are electrically connected to the package. With the arrangement, a compact, low-cost, and highly reliable high-frequency-use semiconductor device can be offered with no increase in chip size and the like and no need to redesign the external terminals and the like of the high-frequency-use semiconductor chip, package, circuit substrate, and the like.