发明名称 Method of manufacture of a semiconductor device
摘要 A method for correcting a photo-contiguous effect during manufacture of a semiconductor device comprising the steps of: designating a first peripheral region surrounding a first layer; locating at least a corner of a second layer belonging to the first peripheral region; forming a second peripheral region surrounding the corner; and adding the second peripheral region to the first layer is disclosed. The method can suppress not only increase of the data and of a period of time for correcting the photo-contiguous effect but also deterioration of resolution can be prevented.
申请公布号 GB2344436(B) 申请公布日期 2001.03.21
申请号 GB19990027301 申请日期 1999.11.18
申请人 * NEC CORPORATION 发明人 KEIICHIRO * TOUNAI
分类号 H01L21/3205;G03F1/36;G03F1/68;G03F7/20;H01L21/027;H01L21/768;H01L23/52;H01L23/522 主分类号 H01L21/3205
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