发明名称 |
Method of manufacture of a semiconductor device |
摘要 |
A method for correcting a photo-contiguous effect during manufacture of a semiconductor device comprising the steps of: designating a first peripheral region surrounding a first layer; locating at least a corner of a second layer belonging to the first peripheral region; forming a second peripheral region surrounding the corner; and adding the second peripheral region to the first layer is disclosed. The method can suppress not only increase of the data and of a period of time for correcting the photo-contiguous effect but also deterioration of resolution can be prevented. |
申请公布号 |
GB2344436(B) |
申请公布日期 |
2001.03.21 |
申请号 |
GB19990027301 |
申请日期 |
1999.11.18 |
申请人 |
* NEC CORPORATION |
发明人 |
KEIICHIRO * TOUNAI |
分类号 |
H01L21/3205;G03F1/36;G03F1/68;G03F7/20;H01L21/027;H01L21/768;H01L23/52;H01L23/522 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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