发明名称 MICROWAVE SUPPLY DEVICE AND PLASMA TREATMENT DEVICE AS WELL TREATMENT THEREFOR
摘要 PROBLEM TO BE SOLVED: To more precisely control a microwave radiation characteristic and to enhance the uniformity of a plasma treatment in a radial direction of a work by arranging the centers of plural slots for radiating microwaves so as to deviate from the center of an annular waveguide. SOLUTION: The annular waveguide 13 forms an endless annular groove having, for example, a circumferential length of 3 times the wavelength in the waveguide, i.e., 152 mm and a slotted plate 23 is so formed that the center of the slot 33 deviates 24 mm inward from the center of the annular waveguide 13. The work W is installed on a work holding means 2 and is heated and held to and at 300 deg.C after the pressure is reduced to, for example, 1.33×10-5 Pa. Gaseous nitrogen and gaseous monosilane are introduced into a vessel 1 and the inside of the vessel is maintained under 2.66 Pa by a discharge system valve. Electric power of, for example, 3.0 KW and 2.45 GHz is supplied via a microwave supply device 3 from a microwave power source 6 to generate the plasma within a space 9, by which the silicon nitride film is obtained.
申请公布号 JP2001073150(A) 申请公布日期 2001.03.21
申请号 JP19990306902 申请日期 1999.10.28
申请人 CANON INC 发明人 SUZUKI NOBUMASA;YOKOSHIMA SHIGENOBU
分类号 H01L21/302;C23C16/511;C23F4/00;H01L21/205;H01L21/3065;H05H1/46 主分类号 H01L21/302
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