发明名称 RAW MATERIAL FOR THIN FILM OF PEROVSKITE-TYPE COMPLEX OXIDE (SUCH AS A3+2B+B5+O6, A2+2B3+B5+O6 AND A2+3B2+B5+2O 9), AND METHOD FOR GROWING THE OXIDE
摘要 PROBLEM TO BE SOLVED: To provide a raw material capable of strictly controlling the compositional ratio of perovskite-type complex oxide which is a complex compd. being a three-dimensional compd. SOLUTION: This BB'-double metal alkoxide (B=B+, B'=B5+; B=B3+, B'=B5+; B=B2+, B'B=B5+) raw material is used for organometallic vapor growth of a perovskite-type complex oxide thin film contg. plural metallic elements on the B site of perovskite structure ABO3, where BB'-double metal alkoxide is composed of BB'(O-X)6 [B=Li, Na, K; B'=Nb, Ta; X=CH3, C2H5, iC3H7, tC4H9] in the case of B=B+, B'=B5+, of BB'(O-X)8 [B=Al, Ga; B'=Nb, Ta; X=CH3, C2H5, iC3H7, tC4H9] in the case of B=B3+, B'=B5+, and of B[B'(O-X)6]2 [B=Mg, Ca, Sr, Ba; B'=Nb, Ta; X=CH3, C2H5, iC3H7, tC4H9].
申请公布号 JP2001073142(A) 申请公布日期 2001.03.21
申请号 JP19990248467 申请日期 1999.09.02
申请人 INTERNATL SUPERCONDUCTIVITY TECHNOLOGY CENTER 发明人 ZAMA HIDEAKI;TANABE KEIICHI;MORISHITA TADATAKA
分类号 C01G35/00;C07F5/00;C07F5/06;C07F9/00;C23C16/40;H01L39/24;(IPC1-7):C23C16/40 主分类号 C01G35/00
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