| 摘要 |
PROBLEM TO BE SOLVED: To provide a copper thin film having small specific resistance. SOLUTION: At the time of arranging a substrate 15 in a sputtering system 1 and sputtering a copper target 21, a trace amt. of air is introduced from piping 31 for adding gas and is added to a sputtering gas. When a copper thin film deposited on the surface of a silicon substrate 15 is left in the air, its specific resistance decreases and approaches the value of bulk copper. Effectively, the partial pressure of the air to be introduced is controlled to <=6.65×10-4 Pa. For reducing the partial pressure value, preferably, the air is intermittently introduced.
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