| 摘要 |
PROBLEM TO BE SOLVED: To deposit a thin oxide film having uniform quality on a substrate large in area, to suppress the generation of particles and to improve the yield by generating the uniform flow of a gaseous starting material on the space between electrodes generating plasma discharge. SOLUTION: This 1st thin film deposition system 1, in which plasma discharge is generated on the space between a 1st electrode 2 and a 2nd electrode 22 arranged in a counter state in a reaction chamber 11 to deposit a thin film, is provided with a nozzle 12 provided with a blow-off port in the reaction chamber 11 for blowing off a gaseous starting material for depositing a thin film in the direction almost parallel to the counter 1st electrode 21 face and 2nd electrode 22 face, and an exhaust port 23 formed on the almost center part of the 1st electrode 21 or 2nd electrode 22 for exhausting the gas in the reaction chamber 11.
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