发明名称 |
Semiconductor device and method of manufacture |
摘要 |
A semiconductor device (10) having a termination structure (25) and a reduced on-resistance. The termination structure (25) is fabricated using the same processing steps that were used for manufacturing an active device region (21). The termination structure (25) and the active device region (21) are formed by etching trenches (22, 23) into a drift layer (14). The trenches (22, 23) are filled with a doped polysilicon trench fill material (24), which is subsequently planarized. The semiconductor device (10) is formed in the trenches (22) filled with the polysilicon trench fill material (24) that are in the active region. The trenches (23) filled with the polysilicon trench fill material (24) in a termination region serve as termination structures.
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申请公布号 |
US6204097(B1) |
申请公布日期 |
2001.03.20 |
申请号 |
US19990259602 |
申请日期 |
1999.03.01 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
发明人 |
SHEN ZHENG;ROBB FRANCINE Y.;ROBB STEPHEN P. |
分类号 |
H01L21/331;H01L29/06;H01L29/08;H01L29/10;H01L29/45;H01L29/739;H01L29/78;(IPC1-7):H01L21/332 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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