| 摘要 |
The present invention provides a nitride system semiconductor device which decreases in cost and improves productivity without heat treatment after the growth and which increases lifetime and reliability by enhancing the quality of a p-type conductive layer, and a method for manufacturing the nitride system semiconductor device. The nitride system semiconductor device has a multilayer structure of an n-type InxGayAlzB1-x-y-zNmPnAs1-m-n (0<=x, 0<=y 0<=z, 0<=x+y+z<=1, 0<m, 0<=n, 0<m+n<=1) layer, a p-type InxGayAlzB1-x-y-zNmPnAs1-m-n (0<=x, 0<=y, 0<=z, 0<=x+y+z<=1, 0<m, 0<n, 0<m+n<=1) layer, and an electrode 22 formed on a substrate. The oxygen concentration of the surface of the p-type InxGayAlzB1-x-y-zNmPnAs1-m-n layer is 5x1018 cm-3 or lower.
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