| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of micromachine in which the freedom of selection of a substrate is increased by a novel method to allow the use of an inexpensive substrate and also allow the manufacture of a structure having a large difference in level. SOLUTION: Au/Ti films (2, 3, 4, 12a, and 12b) forming an insulating layer 5 and a line conductor or control electrode are formed on a high resistance silicon-substrate 1, and an insulating layer 6 is formed thereon. A copper film 20 as conductive sacrifice layer is formed on the substrate 1. A photoresist 22 is formed thereon, an amorphous Ni-P film 8 is accumulated on the substrate 1 including the Cu-sacrifice layer 20 by electroless plating method (electroless Ni-P plating). The Cu sacrifice layer 20 is removed by etching to make the amorphous Ni-P film 8 into a beam structure.
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