Method for patterning semiconductors with high precision, good homogeneity and reproducibility

摘要

A thin-film system is deposited onto a surface of a semiconductor region. After at least one window has been opened in the thin-film system, the window serves as a mask for a first selective processing of a first semiconductor partial region. By undercutting the thin-film system, the edge of the window is drawn back approximately uniformly by a mean undercutting depth. The at least one enlarged window serves as a mask for a second selective processing of a second semiconductor partial region. A semiconductor structure is also provided.