SUBSTITUTIONAL CARBON IN SILICON

摘要

The invention provides a method of producing silicon with about 100 % substitutionality of very high concentrations of carbon up to about 10 21cm-3, which has good quality recrystallised layers containing low levels of residual damage, and which avoids precipitation of mobile carbon. This method, compatible with current state-of-the art VLSI silicon technology, comprises the sequential steps of: implanting a silicon wafer with carbon ions, and two steps annealing of the implanted silicon wafer.