发明名称 Data input/output circuit for performing high speed memory data read operation
摘要 A data input/output circuit used to program the cells of a memory array or to determine the state of those cells. The circuit includes a data write path used for programming the memory cells in the array and a data read path for reading data indicative of the state of the cells. The data write path includes switching means for electrically disconnecting the high capacitance elements of the write path from the read path. The switching means is under the control of a control means which acts to enable or disable the switching means. The switching means serves to electrically isolate the high capacitance elements of the write path from the read path, thereby increasing the speed with which a read operation be performed.
申请公布号 US6205058(B1) 申请公布日期 2001.03.20
申请号 US19980031900 申请日期 1998.02.27
申请人 MICRON TECHNOLOGY, INC. 发明人 ROOHPARVAR FRANKIE F.
分类号 G11C7/10;(IPC1-7):G11C13/00 主分类号 G11C7/10
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