发明名称 Nonvolatile memory
摘要 A nonvolatile memory includes paired memory elements each including a storage transistor having a control gate and a floating gate. Through a write operation, one of the storage transistors is brought into a depletion state and the other storage transistor is brought into an enhancement state. Subsequently, a connection transistor is operated in order to serially connect the paired memory elements. As result, a binary signal corresponding to the statuses of the paired storage transistors is outputted.
申请公布号 US6205054(B1) 申请公布日期 2001.03.20
申请号 US19990459568 申请日期 1999.12.13
申请人 GLOBAL ALLIANCE INC. 发明人 INAMI NOBUO
分类号 G11C16/04;H01L21/8247;H01L27/115;(IPC1-7):G11C16/04 主分类号 G11C16/04
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