Semiconductor wafer pretreatment utilizing ultraviolet activated chlorine

摘要

Systems and methods are described for semiconductor wafer pretreatment. A method of treating a semiconductor wafer, includes contacting the semiconductor wafer with a mixture including HF and CH3OH; and then contacting the semiconductor wafer with Cl2 and simultaneously exposing said semiconductor wafer to a source of ultraviolet energy. The selective HSG temperature of formation window is widened. In addition, robustness with regard to changes in the reactor ambient and substrate condition, and selectivity with regard to underlying dielectric layers, are both improved.