发明名称 |
Method for forming multi-layered liner on sidewall of node contact opening |
摘要 |
A method for forming a multi-layered liner on the sidewalls of a node contact opening includes the steps of providing a substrate having a dielectric layer thereon. The dielectric layer further includes a node contact opening that exposes a portion of the substrate. A first liner layer is then formed on the sidewalls of the node contact opening. Next, a second liner layer is formed over the first liner layer such that the first liner layer and the second liner layer together form a dual-layered liner. The first liner layer in contact with the dielectric layer has good insulation capacity while the second liner layer has good etch-resisting property.
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申请公布号 |
US6204107(B1) |
申请公布日期 |
2001.03.20 |
申请号 |
US19980208611 |
申请日期 |
1998.12.08 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
LIN KUO-CHI;LIN KUEN-YOW;TSAI CHIEN-HUA;LIN KUN-CHI |
分类号 |
H01L21/768;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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