发明名称 Semiconductor memory device having program circuit
摘要 A memory core part includes a program part and a voltage supply part. The program part includes a program structure part, a latch part and an address compare part. The program structure part includes an electric fuse blown with a program voltage. The voltage supply part supplies the program voltage to the program part every repair address. The latch part holds the program state in the program structure part on the basis of a transfer signal. The address compare part outputs a spare determination result on the basis of an input address and the latched program state.
申请公布号 US6205064(B1) 申请公布日期 2001.03.20
申请号 US19990376060 申请日期 1999.08.17
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 OOISHI TSUKASA
分类号 G11C11/401;G11C16/06;G11C29/00;G11C29/04;G11C29/24;H01L21/8242;H01L27/108;(IPC1-7):G11C7/00 主分类号 G11C11/401
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