| 摘要 |
In a Ti/TiN film continuous forming method, when a nitride mode TiN film is formed in a TiN film forming step, according to a correlation between the generation conditions of the nitride TiN film and the metallic mode TiN film and the pressure in the process chamber, the correlation being defined by a hysteresis characteristic having a first route in which the internal pressure in the process chamber is reduced from a high pressure state through a first branch point to a second branch point and a second route in which the internal pressure in the process chamber is increased from a low pressure state through a second branch point to the first branch point, the first and second routes being mutually different from each other at the first branch point and the second branch point, and the nitride mode TiN film being formed under a pressure condition on the first route while the metallic mode TiN film is formed under a pressure condition on the second route, the TiN film is formed under the internal pressure of the process chamber which is higher than that at the first branch point. Further, when a metallic mode TiN film is formed in the TiN film forming step, the TiN film is formed under the internal pressure of the process chamber which is lower than that at the second branch point.
|
