| 摘要 |
A method and apparatus for producing a semiconductor device can provide a uniform film on a substrate. A substrate is introduced into a reaction chamber or tube (51) which has gas feed ports (52, 53) and gas exhaust ports (54, 55). The substrate in the reaction tube (51) is heated to substantially a film forming temperature while supplying a prescribed gas to the reaction tube (51) through the gas feed ports (52, 53) and exhausting the prescribed gas from the reaction tube (51) through all the exhaust ports (54, 55). A film-forming gas is supplied to the reaction tube (51) to form a film on the substrate. The substrate with the film formed thereon is taken out of the reaction tube (51). Moreover, after the film formation on the substrate, a prescribed gas is supplied to the reaction tube (51) from the gas feed ports (52, 53) while being exhausted from the reaction tube (51) through all the exhaust ports (54, 55), thereby removing a residual gas in the reaction tube.
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