Field effect transistor with improved driving capability

摘要

The gate width of a field effect transistor is increased to a value greater than a size of an active region by forming an inclined portion of a gate electrode. As a result, the current driving capability of a field effect transistor is increased without degrading the integration density. The driving capability of the transistor can be further effectively increased by forming an expanded portion of the active region at a location corresponding to the inclined portion of the gate electrode thereby reducing the resistance of the diffusion layer.