| 摘要 |
A method of forming an insulated well in an upper portion of a silicon substrate, including the steps of providing a structure of silicon-on-insulator type including a silicon substrate, an insulating layer, and a thin single-crystal silicon layer; removing the insulating layer and the thin silicon layer outside locations where the insulated well is desired to be formed; growing an epitaxial layer; performing a planarization; and making a vertical insulating wall above the periphery of the maintained portion of the thin insulating layer.
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