| 摘要 |
PURPOSE: A TFT(Thin Film Transistor) and a method for fabricating the same are provided to reduce off-current in the TFT having a bottom gate structure by weakening an electric field of a drain junction portion. CONSTITUTION: A gate electrode(402) is formed on an insulating substrate(400). A gate insulating layer(404) is laminated on the gate electrode(402). An active layer(406) is formed on the gate insulating layer(404). An ion blocking mask(420) is patterned on a predetermined portion of the active layer(406) in order to define a channel region. A channel region is formed on a part corresponding to the ion blocking mask(420). A source/drain region is formed on an edge of the channel region. An LDD(Lightly Doped Drain)(406-1) as a low density dopant region is formed on the source/drain region. An offset region(406-3) is formed on the gate insulating layer(404). A source and a drain electrode are formed on the active layer(406).
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