| 摘要 |
PURPOSE:To realize a yellow color LED capable of emitting light efficiently with a high brightness by limiting, to the optimum range, the crystal composition and carrier concentration of each layer of DH construction section. CONSTITUTION:In an epitaxial wafer having double hetero-construction, the crystal composition of the lower clad layer 5 is expressed by (AlxGa1-x)yIn1-y, its n-type carrier concentration is within the range of 6X10<17>cm<-3> to 9X10<17>cm<-3>, the crystal composition of an activated layer 4 is expressed by (AlxGa1-x)yIn1-yP, and the p-type carrier concentration is within the range of 8X10<17>cm<-3> to 2X10<18>cm<-3>. In the case of upper clad layer 3, the crystal composition can be expressed by (AlxGa1-x)yIn1-yP, the p-type clad layer 3 is within the range of 8X10<17>cm<-3> to 2X10<18>cm<-3> and the wavelength of emitting light is within the range of 580nm to 630nm. Therefore, the efficiency for converting a current applied to the light emitting layer into light can be increased and high-accuracy yellow to red LED's can be obtained, which can be used also outdoors. |
