发明名称
摘要 PURPOSE:To eliminate necessity for providing any decompressed environment, construct the device small and movable, allow the device to operate with a high processing ability and at low cost, give less damage to the material to be processed, and subject the material to a surface processing locally as applicable. CONSTITUTION:A gas according to the purpose is introduced in a gas passage 2 formed from a dielectric material. A high frequency voltage is impressed, and within the gas passage the gas is allowed to conduct a gas discharge under the atmospheric pressure or with a certain pressure around it. The active seed of gas produced by this discharging is turned into a gas flow, to which a material to be processed 11 is exposed so that its surface undergoes the intended processing.
申请公布号 JP3147137(B2) 申请公布日期 2001.03.19
申请号 JP19940124250 申请日期 1994.05.14
申请人 发明人
分类号 H05H1/24;B01J19/08;B23K10/02;C23F4/00;G02F1/13;H01L21/302;H01L21/3065;H01L21/56;H05H1/46 主分类号 H05H1/24
代理机构 代理人
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