METHOD FOR FORMING GATE OXIDE

摘要

PURPOSE: A method for forming gate oxide is provided to improve a reliability of the gate oxide by eliminating dangling bonds existed in interface between the gate oxide and a semiconductor substrate. CONSTITUTION: An interface(27) is formed between a semiconductor substrate(21) and a gate oxide(29). Saturated bonds(24) between silicon atoms(23) and the silicon atoms(23) and oxygen atoms(26) are existed in the semiconductor substrate(21) and the gate oxide(29). Si-H saturated bonds(24) are existed in the interface(27). The gate oxide(29) is formed on the semiconductor substrate(21) under oxygen atmosphere by rising the temperature in a furnace of nitrogen atmosphere to 900-1000°C. After falling the temperature in the furnace to 300-450°C, the resultant structure is annealed at nitrogen and oxygen atmosphere so as to remove dangling bonds existed in the interface(27).